RENA Technologies introduces it’s new InCellPlate Cu at PVSEC in Hamburg.
InCellPlate Cu is RENA’s inline equipment for direct plating of a Ni/Cu/Ag stack on silicon. Combined with laser ablation of the silicon nitride layer and subsequent inline anneal, it provides complete front-side metallization for solar cell manufacturing. Compared with screen-printing, the technology allows cutting the cell production cost by 6$ct and at the same time offers potential for efficiency improvement.
The InCellPlate Cu is based on RENA’s proven NIAK inline platform for up to 3600w/h throughput. What is more, RENA’s patented technology allows single side plating of the cell’s sunny side while keeping the rear-side dry. This reduces the drag-out of electrolyte and associated production costs, avoids undesired plating of the tool contacts and excludes the risk of degradation of the aluminum paste by contact with the electrolyte.
Direct plating on Si with RENA’s InCellPlate Cu makes the use of screen-print paste on the front side obsolete. It further replaces most of the silver with cheaper copper as a conductive metal, all this resulting in a cost saving of 6$ct per cell. Furthermore, the technology allows the formation of thinner fingers (≤30 μm) and contact formation to emitters with higher sheet resistance (≥120 Ohmsq.), thus enabling higher currents and voltages while keeping the fill factor on a high level.
