- Firm to establish Gallium Nitride (GaN) ecosystem and capitalise growing demand for next-gen semiconductor solutions in power and renewable energy, 5G, wireless communications and data centres
- Nation is at the cusp of becoming Asia’s epicentre in power efficiencies, further enabling industry’s competitive advantage and technology advancement in smart city solutions
- To be operationalised mid-2021, centre’s collaboration with customers, universities, research institutes and tool vendors in GaN development aims to drive lower cost barriers
Singapore, 1 Sept 2020 – Singapore-based IGSS GaN Pte.Ltd (IGaN), an internationally-recognised technology developer and commercialisation experts in gallium nitride-on-silicon/silicon carbide (GaN-on-Si/SiC), furthers its expansion initiatives following demonstrated successes in pilot lines of customers. Fuelling the company’s GaN tech ambitions, the combined commercial and Global Joint Lab for GaN Epi Centre in Singapore looks to address mass commercialisation challenges of a niche semiconductor technology billed as the alternative to silicon today.
IGaN, its holding company IGSS Ventures (IGSSV), and select partners have committed to investing some US$73mil which comes on the heels of the recent onboarding of a renowned toolmaker. Operationalisation of the GaN Epi Centre is envisioned for mid-2021 and is poised to expand GaN epi production capacity and the mass production 8″ GaN fabrication technologies.
GaN fulfils two key criteria: improving output power while keeping costs and energy consumption low simultaneously – creating a “green network” effect that extends to high-growth use-case areas and sustainability demands. High-growth areas include new applications and next-generation technologies like power and renewable energy, 5G, wireless communication, and data centres – which require high switching frequencies, efficient energy management and the ability to perform under high power densities.
